Granted Patent
Utility
US 6,312,816 · App. 09/026,946
A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
Inventors:
Jeffrey F. Roeder, Ing-Shin Chen, Steven M. Bilodeau, Thomas H. Baum
Patented Case
View Patent ↗
Granted: Nov 6, 2001
Filed: Feb 20, 1998
Inventors
Jeffrey F. Roeder
Ing-Shin Chen
Steven M. Bilodeau
Thomas H. Baum
Assignee (at issue)
ADVANCED TECHNOLOGY & MATERIALS CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.