Granted Patent
Utility
US 6,313,508 · App. 09/179,851
Semiconductor device of high-voltage CMOS structure and method of fabricating same
Inventor:
Kenya Kobayashi
Patented Case
View Patent ↗
Granted: Nov 6, 2001
Filed: Oct 28, 1998
Inventor
Kenya Kobayashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.