IP Library Granted Patent US 6,313,656
Granted Patent Utility
US 6,313,656 · App. 09/372,307

Method of testing leakage current at a contact-making point in an integrated circuit by determining a potential at the contact-making point

Inventors: Thilo Schaffroth, Florian Schamberger, Helmut Schneider
Patented Case View Patent ↗
Granted: Nov 6, 2001 Filed: Aug 11, 1999
Inventors
Thilo Schaffroth
Florian Schamberger
Helmut Schneider
Assignee (at issue)
Siemens Aktiengesellschaft

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Quick Facts
Patent No.
US 6,313,656
App. No.
09/372,307
Filed
1999-08-11
Granted
2001-11-06
Kind
A