IP Library Granted Patent US 6,316,293
Granted Patent Utility
US 6,316,293 · App. 09/531,749

Method of forming a nand-type flash memory device having a non-stacked gate transistor structure

Inventor: Hao Fang
Patented Case View Patent ↗
Granted: Nov 13, 2001 Filed: Mar 20, 2000
Inventor
Hao Fang
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,316,293
App. No.
09/531,749
Filed
2000-03-20
Granted
2001-11-13
Kind
A