IP Library Granted Patent US 6,319,313
Granted Patent Utility
US 6,319,313 · App. 09/521,288

Barium doping of molten silicon for use in crystal growing process

Inventors: Richard J. Phillips, Steven Jack Keltner, John D. Holder
Patented Case View Patent ↗
Granted: Nov 20, 2001 Filed: Mar 8, 2000
Inventors
Richard J. Phillips
Steven Jack Keltner
John D. Holder
Assignee (at issue)
MEMC Electronic Materials, Inc.

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,319,313
App. No.
09/521,288
Filed
2000-03-08
Granted
2001-11-20
Kind
A