Granted Patent
Utility
US 6,319,734 · App. 09/451,557
Method for establishing differential injection conditions in mosfet source/drain regions based on determining the permitted amount of energy contamination with respect to desired junction depth
Inventor:
Tomoko Matsuda
Patented Case
View Patent ↗
Granted: Nov 20, 2001
Filed: Dec 1, 1999
Inventor
Tomoko Matsuda
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.