IP Library › Granted Patent US 6,319,765
Granted Patent Utility
US 6,319,765 · App. 09/473,107

Method for fabricating a memory device with a high dielectric capacitor

Inventors: Ho Jin Cho, Kwon Hong
Patented Case View Patent ↗
Granted: Nov 20, 2001 Filed: Dec 28, 1999
Inventors
Ho Jin Cho
Kwon Hong
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.

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Quick Facts
Patent No.
US 6,319,765
App. No.
09/473,107
Filed
1999-12-28
Granted
2001-11-20
Kind
A