IP Library Granted Patent US 6,319,775
Granted Patent Utility
US 6,319,775 · App. 09/433,037

Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device

Inventors: Arvind Halliyal, Robert B. Ogle, Susan Kim, Kenneth Wo-Wai Au
Patented Case View Patent ↗
Granted: Nov 20, 2001 Filed: Oct 25, 1999
Inventors
Arvind Halliyal
Robert B. Ogle
Susan Kim
Kenneth Wo-Wai Au
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,319,775
App. No.
09/433,037
Filed
1999-10-25
Granted
2001-11-20
Kind
A