Granted Patent
Utility
US 6,323,539 · App. 09/639,738
High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
Inventors:
Tatsuhiko Fujihira, Yukio Yano, Shigeyuki Obinata, Naoki Kumagai
Patented Case
View Patent ↗
Granted: Nov 27, 2001
Filed: Aug 16, 2000
Inventors
Tatsuhiko Fujihira
Yukio Yano
Shigeyuki Obinata
Naoki Kumagai
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.