IP Library Granted Patent US 6,326,253
Granted Patent Utility
US 6,326,253 · App. 09/333,050

Method for fabricating semiconductor device including MIS and bipolar transistors

Inventor: Naoki Kotani
Patented Case View Patent ↗
Granted: Dec 4, 2001 Filed: Jun 15, 1999
Inventor
Naoki Kotani
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,326,253
App. No.
09/333,050
Filed
1999-06-15
Granted
2001-12-04
Kind
A