Granted Patent
Utility
US 6,328,795 · App. 09/344,709
Process for growth of defect free silicon crystals of arbitrarily large diameters
Inventors:
Robert J. Falster, Harold W. Korb
Patented Case
View Patent ↗
Granted: Dec 11, 2001
Filed: Jun 25, 1999
Inventors
Robert J. Falster
Harold W. Korb
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.