Granted Patent
Utility
US 6,329,063 · App. 09/210,166
Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
Inventors:
Yu-Hwa Lo, Felix Ejeckam
Patented Case
View Patent ↗
Granted: Dec 11, 2001
Filed: Dec 11, 1998
Inventors
Yu-Hwa Lo
Felix Ejeckam
Assignee (at issue)
Nova Crystals, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.