IP Library Granted Patent US 6,333,255
Granted Patent Utility
US 6,333,255 · App. 09/137,150

Method for making semiconductor device containing low carbon film for interconnect structures

Inventor: Mitsuru Sekiguchi
Patented Case View Patent ↗
Granted: Dec 25, 2001 Filed: Aug 20, 1998
Inventor
Mitsuru Sekiguchi
Assignee (at issue)
Matsushita Electronics Corporation

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Quick Facts
Patent No.
US 6,333,255
App. No.
09/137,150
Filed
1998-08-20
Granted
2001-12-25
Kind
A