Granted Patent
Utility
US 6,339,014 · App. 09/289,960
Method for growing nitride compound semiconductor
Inventors:
Masahiro Ishida, Masaaki Yuri, Osamu Imafuji, Tadao Hashimoto, Kenji Orita
Patented Case
View Patent ↗
Granted: Jan 15, 2002
Filed: Apr 13, 1999
Inventors
Masahiro Ishida
Masaaki Yuri
Osamu Imafuji
Tadao Hashimoto
Kenji Orita
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.