IP Library › Granted Patent US 6,339,016
Granted Patent Utility
US 6,339,016 · App. 09/607,389

Method and apparatus for forming an epitaxial silicon wafer with a denuded zone

Inventors: Tom Torack, Michael J. Ries
Patented Case View Patent ↗
Granted: Jan 15, 2002 Filed: Jun 30, 2000
Inventors
Tom Torack
Michael J. Ries
Assignee (at issue)
MEMC Electronic Materials, Inc.

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Quick Facts
Patent No.
US 6,339,016
App. No.
09/607,389
Filed
2000-06-30
Granted
2002-01-15
Kind
B1