IP Library › Granted Patent US 6,339,241
Granted Patent Utility
US 6,339,241 · App. 09/602,426

Structure and process for 6F2 trench capacitor DRAM cell with vertical MOSFET and 3F bitline pitch

Inventors: Jack A. Mandelman, Ramachandra Divakaruni, Carl Radens, Ulrike Gruening
Patented Case View Patent ↗
Granted: Jan 15, 2002 Filed: Jun 23, 2000
Inventors
Jack A. Mandelman
Ramachandra Divakaruni
Carl Radens
Ulrike Gruening
Assignee (at issue)
International Business Machines Corporation

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Quick Facts
Patent No.
US 6,339,241
App. No.
09/602,426
Filed
2000-06-23
Granted
2002-01-15
Kind
B1