IP Library Granted Patent US 6,340,627
Granted Patent Utility
US 6,340,627 · App. 09/597,064

Method of making a doped silicon diffusion barrier region

Inventor: Pai-Hung Pan
Patented Case View Patent ↗
Granted: Jan 22, 2002 Filed: Jun 19, 2000
Inventor
Pai-Hung Pan
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,340,627
App. No.
09/597,064
Filed
2000-06-19
Granted
2002-01-22
Kind
B1