Granted Patent
Utility
US 6,340,629 · App. 09/466,752
Method for forming gate electrodes of semiconductor device using a separated WN layer
Inventors:
In-Seok Yeo, Jean Lee
Patented Case
View Patent ↗
Granted: Jan 22, 2002
Filed: Dec 17, 1999
Inventors
In-Seok Yeo
Jean Lee
Assignee (at issue)
Hyundai Electronics Industries Co. Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.