Granted Patent
Utility
US 6,344,085 · App. 09/761,809
Device and method for producing at least one SiC single crystal
Inventors:
Harald Kuhn, Roland Rupp, Rene Stein, Johannes Volkl
Patented Case
View Patent ↗
Granted: Feb 5, 2002
Filed: Jan 16, 2001
Inventors
Harald Kuhn
Roland Rupp
Rene Stein
Johannes Volkl
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.