Granted Patent
Utility
US 6,344,676 · App. 09/533,824
Power semiconductor device having low on-resistance and high breakdown voltage
Inventors:
Chong-man Yun, Tae Hoon Kim, Ho-cheol Jang, Young-chull Choi
Patented Case
View Patent ↗
Granted: Feb 5, 2002
Filed: Mar 24, 2000
Inventors
Chong-man Yun
Tae Hoon Kim
Ho-cheol Jang
Young-chull Choi
Assignee (at issue)
SAMSUNG DISPLAY CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.