IP Library Granted Patent US 6,345,064
Granted Patent Utility
US 6,345,064 · App. 09/188,204

Semiconductor laser having an improved current blocking layers and method of forming the same

Inventor: Hiroaki Fujii
Patented Case View Patent ↗
Granted: Feb 5, 2002 Filed: Nov 9, 1998
Inventor
Hiroaki Fujii
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,345,064
App. No.
09/188,204
Filed
1998-11-09
Granted
2002-02-05
Kind
B1