Granted Patent
Utility
US 6,346,444 · App. 09/653,550
Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof
Inventors:
Chan Ho Park, Jin Kyeong Kim, Jae Hong Park
Patented Case
View Patent ↗
Granted: Feb 12, 2002
Filed: Aug 31, 2000
Inventors
Chan Ho Park
Jin Kyeong Kim
Jae Hong Park
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.