Granted Patent
Utility
US 6,346,465 · App. 09/598,502
Semiconductor device with silicide contact structure and fabrication method thereof
Inventors:
Yoshinao Miura, Koichi Ishida
Patented Case
View Patent ↗
Granted: Feb 12, 2002
Filed: Jun 22, 2000
Inventors
Yoshinao Miura
Koichi Ishida
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.