Granted Patent
Utility
US 6,353,249 · App. 09/866,239
MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
Inventors:
Diane C. Boyd, Hussein I. Hanafi, Meikei Ieong, Wesley C. Natzle
Patented Case
View Patent ↗
Granted: Mar 5, 2002
Filed: May 25, 2001
Inventors
Diane C. Boyd
Hussein I. Hanafi
Meikei Ieong
Wesley C. Natzle
Assignee (at issue)
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.