Granted Patent
Utility
US 6,358,756 · App. 09/777,888
Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
Inventors:
Gurtej S. Sandhu, Roger Lee, Dennis Keller, Trung T. Doan, Max Hineman, Ren Earl
Patented Case
View Patent ↗
Granted: Mar 19, 2002
Filed: Feb 7, 2001
Inventors
Gurtej S. Sandhu
Roger Lee
Dennis Keller
Trung T. Doan
Max Hineman
Ren Earl
Assignee (at issue)
Micron Technology, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.