IP Library Granted Patent US 6,358,770
Granted Patent Utility
US 6,358,770 · App. 09/758,287

Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same

Inventors: Kunio Itoh, Masahiro Ishida
Patented Case View Patent ↗
Granted: Mar 19, 2002 Filed: Jan 12, 2001
Inventors
Kunio Itoh
Masahiro Ishida
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,358,770
App. No.
09/758,287
Filed
2001-01-12
Granted
2002-03-19
Kind
B2