Granted Patent
Utility
US 6,362,098 · App. 09/794,999
Plasma-enhanced chemical vapor deposition (CVD) method to fill a trench in a semiconductor substrate
Inventors:
Terry A. Breeden, Iraj Shahvandi, Michael Tucker, Olivier Vatel, Karl Mautz, Ralf Zedlitz
Patented Case
View Patent ↗
Granted: Mar 26, 2002
Filed: Feb 28, 2001
Inventors
Terry A. Breeden
Iraj Shahvandi
Michael Tucker
Olivier Vatel
Karl Mautz
Ralf Zedlitz
Assignees (at issue)
Motorola, Inc.
Semiconductor 300 GmbH & Co. KG
Infineon Technologies AG
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.