IP Library › Granted Patent US 6,365,513
Granted Patent Utility
US 6,365,513 · App. 09/162,232

Method of making a semiconductor device including testing before thinning the semiconductor substrate

Inventors: Hidetoshi Furukawa, Atsushi Noma, Tsuyoshi Tanaka, Hidetoshi Ishida, Daisuke Ueda
Patented Case View Patent ↗
Granted: Apr 2, 2002 Filed: Sep 29, 1998
Inventors
Hidetoshi Furukawa
Atsushi Noma
Tsuyoshi Tanaka
Hidetoshi Ishida
Daisuke Ueda
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.

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Quick Facts
Patent No.
US 6,365,513
App. No.
09/162,232
Filed
1998-09-29
Granted
2002-04-02
Kind
B1