Granted Patent
Utility
US 6,372,602 · App. 09/571,733
Method of forming a shallow trench isolation structure in a semiconductor device
Inventor:
Akira Mitsuiki
Patented Case
View Patent ↗
Granted: Apr 16, 2002
Filed: May 15, 2000
Inventor
Akira Mitsuiki
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.