Granted Patent
Utility
US 6,372,613 · App. 09/304,520
Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor
Inventor:
Naoki Sakura
Patented Case
View Patent ↗
Granted: Apr 16, 2002
Filed: May 4, 1999
Inventor
Naoki Sakura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.