IP Library Granted Patent US 6,376,313
Granted Patent Utility
US 6,376,313 · App. 09/079,020

Integrated circuit having at least two vertical MOS transistors and method for manufacturing same

Inventors: Bernd Goebel, Emmerich Bertagnolli
Patented Case View Patent ↗
Granted: Apr 23, 2002 Filed: May 14, 1998
Inventors
Bernd Goebel
Emmerich Bertagnolli
Assignee (at issue)
Siemens Aktiengesellschaft

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Quick Facts
Patent No.
US 6,376,313
App. No.
09/079,020
Filed
1998-05-14
Granted
2002-04-23
Kind
B1