IP Library › Granted Patent US 6,399,459
Granted Patent Utility
US 6,399,459 · App. 09/892,594

Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same

Inventors: Husam N. Al-Shareef, Scott DeBoer, Randhir P. S. Thakur
Patented Case View Patent ↗
Granted: Jun 4, 2002 Filed: Jun 27, 2001
Inventors
Husam N. Al-Shareef
Scott DeBoer
Randhir P. S. Thakur
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,399,459
App. No.
09/892,594
Filed
2001-06-27
Granted
2002-06-04
Kind
B2