Granted Patent
Utility
US 6,399,485 · App. 09/628,435
Semiconductor device with silicide layers and method of forming the same
Inventors:
Keisuke Hatano, Tsuyoshi Nagata
Patented Case
View Patent ↗
Granted: Jun 4, 2002
Filed: Jul 28, 2000
Inventors
Keisuke Hatano
Tsuyoshi Nagata
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.