Granted Patent
Utility
US 6,403,411 · App. 09/208,601
Method for manufacturing lower electrode of DRAM capacitor
Inventors:
Chih-Hsun Chu, Horng-Nan Chern, Kevin Lin, Kuo-Tai Huang, Wen-Yi Hsieh, Tri-Rung Yew
Patented Case
View Patent ↗
Granted: Jun 11, 2002
Filed: Dec 8, 1998
Inventors
Chih-Hsun Chu
Horng-Nan Chern
Kevin Lin
Kuo-Tai Huang
Wen-Yi Hsieh
Tri-Rung Yew
Assignee (at issue)
WINBOND ELECTRONICS CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.