Granted Patent
Utility
US 6,403,415 · App. 09/481,463
Semiconductor device having a metal barrier layer for a dielectric material having a high dielectric constant and a method of manufacture thereof
Inventors:
Glenn B. Alers, Sailesh Mansinh Merchant, Pradip K. Roy
Patented Case
View Patent ↗
Granted: Jun 11, 2002
Filed: Jan 11, 2000
Inventors
Glenn B. Alers
Sailesh Mansinh Merchant
Pradip K. Roy
Assignee (at issue)
Agere Systems Guardian Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.