IP Library Granted Patent US 6,403,447
Granted Patent Utility
US 6,403,447 · App. 09/348,782

Reduced substrate capacitance high performance SOI process

Inventor: Sameer D. Parab
Patented Case View Patent ↗
Granted: Jun 11, 2002 Filed: Jul 7, 1999
Inventor
Sameer D. Parab
Assignee (at issue)
Elantec Semiconductor, Inc.

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Quick Facts
Patent No.
US 6,403,447
App. No.
09/348,782
Filed
1999-07-07
Granted
2002-06-11
Kind
B1