Granted Patent
Utility
US 6,404,012 · App. 09/190,448
Semiconductor device having a reverse conductive type diffusion layer in an extended drain diffusion layer
Inventor:
Kenichiro Takahashi
Patented Case
View Patent ↗
Granted: Jun 11, 2002
Filed: Nov 13, 1998
Inventor
Kenichiro Takahashi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.