Granted Patent
Utility
US 6,404,033 · App. 09/620,653
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication
Inventors:
Paul Chang, Geeng-Chuan Chern, Wayne Y. W. Hsueh, Vladimir Rodov
Patented Case
View Patent ↗
Granted: Jun 11, 2002
Filed: Jul 20, 2000
Inventors
Paul Chang
Geeng-Chuan Chern
Wayne Y. W. Hsueh
Vladimir Rodov
Assignee (at issue)
APD Semiconductor, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.