IP Library Granted Patent US 6,404,669
Granted Patent Utility
US 6,404,669 · App. 09/739,850

Reduced leakage DRAM storage unit

Inventors: Zhigiang Wu, Randhir P. S. Thakur, Alan R. Reinberg, Kirk D. Prall
Patented Case View Patent ↗
Granted: Jun 11, 2002 Filed: Dec 18, 2000
Inventors
Zhigiang Wu
Randhir P. S. Thakur
Alan R. Reinberg
Kirk D. Prall
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,404,669
App. No.
09/739,850
Filed
2000-12-18
Granted
2002-06-11
Kind
B2