Granted Patent
Utility
US 6,409,826 · App. 09/816,015
Low defect density, self-interstitial dominated silicon
Inventors:
Robert Falster, Joseph C. Holzer, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson
Patented Case
View Patent ↗
Granted: Jun 25, 2002
Filed: Mar 23, 2001
Inventors
Robert Falster
Joseph C. Holzer
Steve A. Markgraf
Paolo Mutti
Seamus A. McQuaid
Bayard K. Johnson
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.