Granted Patent
Utility
US 6,410,170 · App. 09/315,863
High resistivity FeXN sputtered films for magnetic storage devices and method of fabrication
Inventors:
Yingjian Chen, Chester Qian
Patented Case
View Patent ↗
Granted: Jun 25, 2002
Filed: May 20, 1999
Inventors
Yingjian Chen
Chester Qian
Assignee (at issue)
Read Rite Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.