Granted Patent
Utility
US 6,410,396 · App. 09/825,065
Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications
Inventors:
Jeffrey Casady, Michael S. Mazzola, Stephen E. Saddow
Patented Case
View Patent ↗
Granted: Jun 25, 2002
Filed: Apr 4, 2001
Inventors
Jeffrey Casady
Michael S. Mazzola
Stephen E. Saddow
Assignee (at issue)
Mississippi State University
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.