Granted Patent
Utility
US 6,410,964 · App. 09/050,356
Semiconductor device capable of preventing gate oxide film from damage by plasma process and method of manufacturing the same
Inventor:
Akira Shida
Patented Case
View Patent ↗
Granted: Jun 25, 2002
Filed: Mar 31, 1998
Inventor
Akira Shida
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.