IP Library Granted Patent US 6,411,542
Granted Patent Utility
US 6,411,542 · App. 09/966,112

Ferroelectric memory device having ferroelectric memory transistors connected to separate well lines

Inventors: Yil Suk Yang, Byoung Gon Yu, In-Kyu You, Won Jae Lee, Kyoung Ik Cho
Patented Case View Patent ↗
Granted: Jun 25, 2002 Filed: Oct 1, 2001
Inventors
Yil Suk Yang
Byoung Gon Yu
In-Kyu You
Won Jae Lee
Kyoung Ik Cho
Assignee (at issue)
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Quick Facts
Patent No.
US 6,411,542
App. No.
09/966,112
Filed
2001-10-01
Granted
2002-06-25
Kind
B1