IP Library › Granted Patent US 6,411,560
Granted Patent Utility
US 6,411,560 · App. 09/987,277

Semiconductor memory device capable of reducing leakage current flowing into substrate

Inventors: Hiroaki Tanizaki, Shigeki Tomishima, Mitsutaka Niiro, Masanao Maruta, Hiroshi Kato, Masatoshi Ishikawa, Takaharu Tsuji, Hideto Hidaka, Tsukasa Ooishi
Patented Case View Patent ↗
Granted: Jun 25, 2002 Filed: Nov 14, 2001
Inventors
Hiroaki Tanizaki
Shigeki Tomishima
Mitsutaka Niiro
Masanao Maruta
Hiroshi Kato
Masatoshi Ishikawa
Takaharu Tsuji
Hideto Hidaka
Tsukasa Ooishi
Assignees (at issue)
MITSUBISHI ELECTRIC CORPORATION
MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED

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Quick Facts
Patent No.
US 6,411,560
App. No.
09/987,277
Filed
2001-11-14
Granted
2002-06-25
Kind
B1