Granted Patent
Utility
US 6,413,793 · App. 09/858,469
Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers
Inventors:
Chuang-Chia Lin, Peter M. Gulvin, Alex T. Tran, Nena Liakopoulos
Patented Case
View Patent ↗
Granted: Jul 2, 2002
Filed: May 17, 2001
Inventors
Chuang-Chia Lin
Peter M. Gulvin
Alex T. Tran
Nena Liakopoulos
Assignee (at issue)
Xerox Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.