IP Library Granted Patent US 6,417,525
Granted Patent Utility
US 6,417,525 · App. 09/381,563

Semiconductor light emitter with current block region formed over the semiconductor layer and electrode connection portion for connecting the pad electrode to the translucent electrode

Inventor: Toshio Hata
Patented Case View Patent ↗
Granted: Jul 9, 2002 Filed: Feb 1, 2000
Inventor
Toshio Hata
Assignee (at issue)
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,417,525
App. No.
09/381,563
Filed
2000-02-01
Granted
2002-07-09
Kind
B1