Granted Patent
Utility
US 6,420,101 · App. 09/598,376
Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure
Inventors:
Zhijian Lu, Alan C. Thomas, Alois Gutmann, Kuang-Jung Chen, Margaret C. Lawson
Patented Case
View Patent ↗
Granted: Jul 16, 2002
Filed: Jun 21, 2000
Inventors
Zhijian Lu
Alan C. Thomas
Alois Gutmann
Kuang-Jung Chen
Margaret C. Lawson
Assignees (at issue)
Infineon Technologies AG
International Business Machines Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.