IP Library Granted Patent US 6,420,264
Granted Patent Utility
US 6,420,264 · App. 09/896,160

Method of forming a silicide region in a Si substrate and a device having same

Inventors: Somit Talwar, Yun Wang
Patented Case View Patent ↗
Granted: Jul 16, 2002 Filed: Jun 28, 2001
Inventors
Somit Talwar
Yun Wang
Assignee (at issue)
Ultratech Stepper, Inc.

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Quick Facts
Patent No.
US 6,420,264
App. No.
09/896,160
Filed
2001-06-28
Granted
2002-07-16
Kind
B1