Granted Patent
Utility
US 6,420,775 · App. 08/806,985
Compound semiconductor device having an ion implanted defect-rich layer for improved backgate effect suppression
Inventor:
Shuji Asai
Patented Case
View Patent ↗
Granted: Jul 16, 2002
Filed: Feb 26, 1997
Inventor
Shuji Asai
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.